High-Chern-number Quantum anomalous Hall insulators in mixing-stacked MnBiTe thin films
arXiv:2504.01607 · doi:10.1038/s41535-025-00775-2
Abstract
Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among them, high-Chern-number QAH insulators offer multiple nondissipative current channels, making them crucial for the development of low-power-consumption electronics. Using first-principles calculations, we propose that high-Chern-number () QAH insulators can be realized in MnBiTe (MBT) multilayer films through the combination of mixed stacking orders, eliminating the need for additional buffer layers. The underlying physical mechanism is validated by calculating real-space-resolved anomalous Hall conductivity (AHC). Local AHC is found to be predominantly located in regions with consecutive correct stacking orders, contributing to quasi-quantized AHC. Conversely, regions with consecutive incorrect stacking contribute minimally to the total AHC, which can be attributed to the varied interlayer coupling in different stacking configurations. Our work provides valuable insights into the design principle for achieving large Chern numbers, and highlights the role of stacking configurations in manipulating electronic and topological properties in MBT films and its derivatives.
arXiv comment7 pages, 4 figures
References in corpus (34)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- WannierTools: An open-source software package for novel topological materials
- Weyl Semimetal in a Topological Insulator Multilayer
- Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBiTe
- Intrinsic quantized anomalous Hall effect in a moiré heterostructure
- Prediction and observation of the first antiferromagnetic topological insulator
- Intrinsic magnetic topological insulators in van der Waals layered MnBiTe-family materials
- Model Hamiltonian for Topological Insulators
- Topological axion states in magnetic insulator MnBiTe with the quantized magnetoelectric effect
- Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
- Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice
- Experimental realization of an intrinsic magnetic topological insulator
- Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
- Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet films
- Quantum anomalous Hall effect from intertwined moiré bands
- Colloquium: Quantum anomalous Hall effect
- High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels
- Crystal growth and magnetic structure of MnBi2Te4
- Electrical switching of magnetic order in an orbital Chern insulator
- Mapping topological order in coordinate space
- Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
- Quantum Anomalous Hall Effect with Higher Plateaus
- Tuning Chern Number in Quantum Anomalous Hall Insulators
- Surfaces of Axion Insulators
- Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state
- Magnetically Controllable Topological Quantum Phase Transitions in Antiferromagnetic Topological Insulator MnBiTe
- Large Quantum Anomalous Hall Effect in Spin-Orbit Proximitized Rhombohedral Graphene
- Switchable anomalous Hall effects in polar-stacked 2D antiferromagnet MnBi2Te4
- Locality of the anomalous Hall conductivity
- Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets
- Tunable dynamical magnetoelectric effect in antiferromagnetic topological insulator MnBiTe films
- Three-Dirac-fermion approach to unexpected universal gapless surface states of van der Waals magnetic topological insulators
- Stacking-dependent Electronic and Topological Properties in van der Waals Antiferromagnet MnBiTe Films