Detection of magnetic gap in the topological surface states of MnBi2Te4
arXiv:2012.15591 · doi:10.1088/0256-307X/38/10/107404
Abstract
Recently, intrinsic antiferromagnetic topological insulator MnBi2Te4 has drawn intense research interest and leads to plenty of significant progress in physics and materials science by hosting quantum anomalous Hall effect, axion insulator state, and other quantum phases. An essential ingredient to realize these quantum states is the magnetic gap in the topological surface states induced by the out-of-plane ferromagnetism on the surface of MnBi2Te4. However, the experimental observations of the surface gap remain controversial. Here, we report the observation of the surface gap via the point contact tunneling spectroscopy. In agreement with theoretical calculations, the gap size is around 50 meV, which vanishes as the sample becomes paramagnetic with increasing temperature. The magnetoresistance hysteresis is detected through the point contact junction on the sample surface with an out-of-plane magnetic field, substantiating the surface ferromagnetism. Furthermore, the non-zero transport spin polarization coming from the ferromagnetism is determined by the point contact Andreev reflection spectroscopy. Combining these results, the magnetism-induced gap in topological surface states of MnBi2Te4 is revealed.
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- On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family
- Three-Dirac-fermion approach to unexpected universal gapless surface states of van der Waals magnetic topological insulators
- Facet dependent surface energy gap on magnetic topological insulators
- Pressure-tunable magnetic topological phases in magnetic topological insulator MnSb4Te7
- The electronic structure of intrinsic magnetic topological insulator MnBi2Te4 quantum wires
- Defect-induced displacement of topological surface state in quantum magnet MnBiTe