Domain wall induced spin-polarized flat bands in antiferromagnetic topological insulators

Abstract

A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Néel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications.

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Cited by in corpus (9)

• Sample-dependent Dirac point gap in MnBi${}_2$Te${}_4$ and its response to the applied surface charge: a combined photoemission and ab initio study
• Topological magnetic materials of the (MnSb${}_2$Te${}_4$)$\cdot$(Sb${}_2$Te${}_3$)${}_n$ van der Waals compounds family
• Dissipationless Layertronics in Axion Insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$
• Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices
• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Spectral features of magnetic domain walls on surface of 3D topological insulators
• Interplay between exchange split Dirac and Rashba-type surface states in MnBi${}_2$Te${}_4$/BiTeI interface
• Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators
• Tuning the Topological Properties of the Antiferromagnetic V(Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_4$ via Sb concentration