Tuning the Topological Properties of the Antiferromagnetic V(Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{4}$ via Sb concentration

D. A-León; D. A. Landínez Téllez; J. Roa-Rojas; Rafael Gonzalez-Hernandez

doi:10.1103/PhysRevMaterials.9.054201

paper

Tuning the Topological Properties of the Antiferromagnetic V(Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{4}$ via Sb concentration

arXiv:2507.23176 · doi:10.1103/PhysRevMaterials.9.054201

Abstract

The investigation of topological materials has uncovered groundbreaking phases of matter with significant implications for quantum technologies. Here, we explore the antiferromagnetic topological insulator family V(Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{4}$ ( $x$ = $0$ , $0.5$ , $1$ ), formed by introducing vanadium telluride (VTe) layers into the layered topological insulator (Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{3}$ . Our results reveal the tunability of the spin Hall conductivity (SHC) and its topological contribution, quantified by the recently introduced average Spin Chern Number (ASCN), via Sb concentration. The materials' strong topological insulating behavior is established through spin-orbit coupling-induced band inversions, nontrivial $Z_{2}$ invariants, and the presence of topological surface states. These findings position V(Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{4}$ as promising candidates for next-generation spintronic devices and advanced quantum applications.

10 pages, 6 figures

Tuning the Topological Properties of the Antiferromagnetic V(Bi1−x​Sbx​)2​Te4​ via Sb concentration

Abstract

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Tuning the Topological Properties of the Antiferromagnetic V(Bi $_{1 - x}$ Sb $_{x}$ ) $_{2}$ Te $_{4}$ via Sb concentration