Quantum anomalous Hall multilayers grown by molecular beam epitaxy
arXiv:1806.05923 · doi:10.1088/0256-307X/35/7/076802
Abstract
Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped (Bi,Sb)Te topological insulator and CdSe normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance , where is the Planck's constant, is the elementary charge and is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator.
9 pages, 3 figures
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- Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES
- Fractional AC Josephson effect in a topological insulator proximitized by a self-formed superconductor
- Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface
- Disorder-Induced Topological Transitions in a Multilayer Topological Insulator
- Distribution of Conductances in Chiral Topological Superconductor Junctions
- Topological Insulators-Based Magnetic Heterostructure
- Localization Trajectory and Chern-Simons axion coupling for Bilayer Quantum Anomalous Hall Systems