Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films
arXiv:2206.03773 · doi:10.1093/nsr/nwad189
Abstract
The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.
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References in corpus (15)
- Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
- Quantum anomalous Hall effect from intertwined moiré bands
- Layer Hall effect in a 2D topological Axion antiferromagnet
- Axion Electrodynamics in Topological Materials
- Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4
- Robust A-type order and spin-flop transition on the surface of the antiferromagnetic topological insulator MnBiTe
- Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
- Magnetic imaging of antiferromagnetic domain walls
- Electric control of a canted-antiferromagnetic Chern insulator
- Native Defects in Antiferromagnetic Topological Insulator MnBiTe
- Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
- Distinct quantum anomalous Hall ground states induced by magnetic disorders
- Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
- Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films
- Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices
Cited by in corpus (14)
- Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops
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- Intrinsic magnetic topological insulators of the MnBiTe family
- Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films
- Multimechanism quantum anomalous Hall and Chern number tunable states in germanene (silicene, stanene)/BiTe heterostructures
- Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBiTe
- Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films
- Universally optimizable strategy for magnetic gaps towards high-temperature quantum anomalous Hall states via magnetic-insulator/topological-insulator building-blocks
- Direct observation of chiral edge current at zero magnetic field in odd-layer MnBiTe
- Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for high-Chern-number quantum anomalous Hall state
- Tailoring Neel orders in Layered Topological Antiferromagnets
- Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators
- Strongly enhanced topological quantum phases in dual-surface AlO-encapsulated MnBiTe
- Giant and Broadband Circular Dichroism from Particle-Hole Symmetry Breaking in Weyl Semimetals