Towards the Quantized Anomalous Hall effect in AlO-capped MnBiTe
arXiv:2405.08677 · doi:10.1038/s41467-025-57039-7
Abstract
The quantum anomalous Hall effect in layered antiferromagnet MnBiTe harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBiTe has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as realizing quantized transport at zero magnetic fields depends critically on fabricating high-quality device. In this article, we address the detrimental influences of fabrication on MnBiTe by simply depositing an AlO thin layer on the surface prior to fabrications. Optical contrast and magnetotransport measurements on over 50 samples demonstrate that AlO can effectively preserve the pristine state of the samples and significantly enhance the anomalous Hall effect towards quantization. Scaling analysis reveals the Berry curvature dominated mechanism of the anomalous Hall effect at various magnetic configurations. By adjusting the gate voltage, we uncover a gate independent antiferromagnetism in MnBiTe. Our experiment not only pave the way for fabricating high-quality transport devices but also advance the exploration of exotic quantum physics in 2D materials.
21 pages, 4 figures
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- Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets
- Intrinsic magnetic topological insulators of the MnBiTe family
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