Evolution of the electronic structure of ultrathin MnBi2Te4 Films

Abstract

Ultrathin films of intrinsic magnetic topological insulator MnBi2Te4 exhibit fascinating quantum properties such as quantum anomalous Hall effect and axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi2Te4 thin films. With increasing film thickness, the electronic structure changes from an insulator-type with a large energy gap to one with in-gap topological surface states, which is, however, still drastically different from the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin film MnBi2Te4 but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi2Te4 thin films.

Online published in Nano Letters

References in corpus (8)

• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
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• Quantum transport theory of anomalous electric, thermoelectric, and thermal Hall effects in ferromagnets
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• Origins of electronic bands in antiferromagnetic topological insulator MnBi${}_2$Te${}_4$
• Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification
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Cited by in corpus (5)

• Intrinsic Magnetic Topological Materials
• On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family
• Non-trivial topology in rare-earth monopnictides from dimensionality reduction
• The electronic structure of Mn${}_{1-x}$Pb${}_x$Bi${}_2$Te${}_4$: experimental evidence of topological phase transition
• Hedgehog-like spin texture in Sb-doped MnBi${}_2$Te${}_4$