Conductance oscillations of antiferromagnetic layer tunnel junctions
arXiv:2304.10363 · doi:10.1103/PhysRevB.107.235415
Abstract
We study the conductance oscillation of an antiferromagnetic layer tunnel junction composed of antiferromagnetic topological insulators (MTIs) such as MnBiTe. In presence of an in-plane magnetic field, we find that the two terminal differential conductance across the junction oscillates as a function of field strength. Notably, the quantum interference at weak fields for the odd-layer MTIs is distinctive from the even-layer MTIs due to the scattering phase difference. Consequently, the differential conductance is vanishing (maximized) at integer magnetic flux quanta for even-layer (odd-layer) junction. The conductance oscillations manifest the layer-dependent quantum interference in which symmetries and scattering phases play essential roles. In numerical calculations, we observe that the quantum interference undergoes an evolution from SQUID-like patterns to Fraunhofer-like oscillations as the junction length increases.
References in corpus (10)
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Progress and prospects in magnetic topological materials
- Layer Hall effect in a 2D topological Axion antiferromagnet
- Electrically Tunable Magnetism in Magnetic Topological Insulators
- Devices with electrically tunable topological insulating phases
- Critical Behavior and Universal Signature of an Axion Insulator State
- Progress and prospects in the quantum anomalous Hall effect
- Magnetic topological transistor exploiting layer-selective transport
- Magnetically tunable Shubnikov-de Hass oscillations in MnBi2Te4