Interplay between magnetic order and electronic band structure in ultrathin GdGe${}_2$ metalloxene films

Abstract

Dimensionality can strongly influence the magnetic structure of solid systems. Here, we predict theoretically and confirm experimentally that the antiferromagnetic (AFM) ground state of bulk gadolinium germanide metalloxene, which has a quasi-layered defective GdGe${}_2$ structure, is preserved in the ultrathin film limit. \textit{Ab initio} calculations demonstrate that ultrathin GdGe${}_2$ films present in-plane intra-layer ferromagnetic coupling and AFM inter-layer coupling in the ground state. Angle-resolved photoemission spectroscopy finds the AFM-induced band splitting expected for the 2 and 3 GdGe${}_2$ trilayer (TL) films, which disappear above the Néel temperature. The comparative analysis of isostructural ultrathin DyGe${}_2$ and GdSi${}_2$ films confirms the magnetic origin of the observed band splitting. These findings are in contrast with the recent report of ferromagnetism in ultrathin metalloxene films, which we ascribe to the presence of uncompensated magnetic moments.

arXiv comment9 pages, 4 figures

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Cited by in corpus (1)

• Unveiling the stacking-dependent electronic properties of 2D ultrathin rare-earth metalloxenes family LnX${}_2$ (Ln = Eu, Gd, Dy; X = Ge, Si)