Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in intrinsic magnetic topological insulator MnBi4Te7

Abstract

Intrinsic magnetic topological insulators (MTIs) MnBi2Te4 and MnBi2Te4/(Bi2Te3)n are expected to realize the high-temperature quantum anomalous Hall effect (QAHE) and dissipationless electrical transport. Extensive efforts have been made on this field but there is still lack of ideal MTI candidate with magnetic ordering of ferromagnetic (FM) ground state. Here, we demonstrate a MTI sample of Mn(Bi0.7Sb0.3)4Te7 which holds the coexistence of FM ground state and topological non-triviality. The dramatic modulation of the magnetism is induced by a charge carrier engineering process by the way of Sb substitution in MnBi4Te7 matrix with AFM ordering. The evolution of magnetism in Mn(Bi1-xSbx)4Te7 is systematically investigated by magnetic measurements and theoretical calculations. The clear topological surface states of the FM sample of x = 0.3 are also verified by angle-resolved photoemission spectra. We also aware that the FM sample of x = 0.3 is close to the charge neutral point. Therefore, the demonstration of intrinsic FM-MTI of Mn(Bi0.7Sb0.3)4Te7 in this work sheds light to the further studies of QAHE realization and optimizations.

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Cited by in corpus (12)

• Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\mathbf{MnB}{\mathbf{i}}_4\mathbf{T}{\mathbf{e}}_7$ and $\mathbf{MnB}{\mathbf{i}}_6\mathbf{T}{\mathbf{e}}_{10}$
• Pressure-tuned intralayer exchange in superlattice-like MnBi2Te4/(Bi2Te3)n topological insulators
• Delicate Ferromagnetism in MnBi${}_6$Te${}_{10}$
• Ferromagnetic MnBi4Te7 obtained with low concentration Sb doping: A promising platform for exploring topological quantum states
• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Charge Carrier Mediation and Ferromagnetism induced in MnBi6Te10 Magnetic Topological Insulators by antimony doping
• Novel magnetic topological insulator FeBi${}_2$Te${}_4$ with controllable topological quantum phase
• Non-volatile Electric Control of Magnetic and Topological Properties of MnBi2Te4 Thin Films
• Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7
• Pressure-tunable magnetic topological phases in magnetic topological insulator MnSb4Te7
• Interplay between surface Dirac and Rashba states specific for topologically nontrivial van der Waals superlattices
• Synthesis of intrinsic magnetic topological insulator MnBi2nTe3n+1 family by chemical vapor transport method with feedback regulation