Charge Carrier Mediation and Ferromagnetism induced in MnBi6Te10 Magnetic Topological Insulators by antimony doping

Abstract

A new kind of intrinsic magnetic topological insulators (MTI) MnBi2Te4 family have shed light on the observation of novel topological quantum effect such as quantum anomalous Hall effect (QAHE). However, the strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder the practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here by magnetic and transport measurements, we demonstrate that Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and the concentration, but also induce the solid into a ferromagnetic (FM) ground state. AFM ground state region which is also close to the charge neutral point can be found in the phase diagram of Mn(SbxBi1-x)6Te10 when x ~ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, and it may take a step further for the realization of high-quality and high-temperature QAHE and the related topological quantum effects in the future.

References in corpus (47)

• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi${}_2$Te${}_4$
• Prediction and observation of the first antiferromagnetic topological insulator
• Intrinsic magnetic topological insulators in van der Waals layered MnBi${}_2$Te${}_4$-family materials
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Topological axion states in magnetic insulator MnBi${}_2$Te${}_4$ with the quantized magnetoelectric effect
• Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
• Experimental realization of an intrinsic magnetic topological insulator
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ films
• Dynamical Axion Field in Topological Magnetic Insulators
• Surface quantized anomalous Hall current and magneto-electric effect in magnetically disordered topological insulators
• High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels
• Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
• Crystal growth and magnetic structure of MnBi2Te4
• Gapless surface Dirac cone in antiferromagnetic topological insulator MnBi${}_2$Te${}_4$
• Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
• Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
• Chemical Aspects of the Antiferromagnetic Topological Insulator MnBi${}_2$Te${}_4$
• Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$
• A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling
• Natural van der Waals heterostructural single crystals with both magnetic and topological properties
• Variety of magnetic topological phases in the (MnBi${}_2$Te${}_4$)(Bi${}_2$Te${}_3$)${}_m$ family
• Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
• Realization of an intrinsic, ferromagnetic topological state in MnBi8Te13
• Evolution of structural, magnetic and transport properties in MnBi2-xSbxTe4
• Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4
• Rational design principles of quantum anomalous Hall effect from superlattice-like magnetic topological insulators
• Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K
• Topological electronic structure and intrinsic magnetization in MnBi${}_4$Te${}_7$: a Bi${}_2$Te${}_3$-derivative with a periodic Mn sublattice
• A-type Antiferromagnetic order in MnBi4Te7 and MnBi6Te10 single crystals
• Crystal and magnetic structures of magnetic topological insulators MnBi${}_2$Te${}_4$ and MnBi${}_4$Te${}_7$
• Magnetic and transport properties in magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)
• Defect-driven ferrimagnetism and hidden magnetization in MnBi${}_2$Te${}_4$
• Intrinsic axion insulating behavior in antiferromagnetic MnBi${}_6$Te${}_{10}$
• Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states
• Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device
• Half-Magnetic Topological Insulator
• Intrinsic magnetic topological insulators
• Universal gapless Dirac cone and tunable topological states in (MnBi${}_2$Te${}_4$)${}_m$(Bi${}_2$Te${}_3$)${}_n$ heterostructures
• Meta-magnetism of weakly-coupled antiferromagnetic topological insulators
• Orbital Complexity in Intrinsic Magnetic Topological Insulators MnBi${}_4$Te${}_7$ and MnBi${}_6$Te${}_{10}$
• Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
• Tuning the magnetism and band topology through antisite defects in Sb doped MnBi4Te7
• Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in intrinsic magnetic topological insulator MnBi4Te7
• Defect Role in the Carrier Tunable Topological Insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$ Thin Films

Cited by in corpus (5)

• Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\mathbf{MnB}{\mathbf{i}}_4\mathbf{T}{\mathbf{e}}_7$ and $\mathbf{MnB}{\mathbf{i}}_6\mathbf{T}{\mathbf{e}}_{10}$
• Intrinsic magnetic topological insulators of the MnBi${}_2$Te${}_4$ family
• Unconventional pressure-driven metamagnetic transitions in topological van der Waals magnets
• Ferroelectrically switchable magnetic multistates in MnBi${}_2$Te${}_4$(Bi${}_2$Te${}_3$)${}_n$ and MnSb${}_2$Te${}_4$(Sb${}_2$Te${}_3$)${}_n$ (n = 0, 1) thin films
• Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi${}_2$Te${}_3$ and BiSbTe${}_3$ containing self-organized MnBi${}_2$Te${}_4$ septuple layers