Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7
arXiv:2404.06005 · doi:10.1063/5.0202692
Abstract
Nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V^-1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, much larger than the magnetic transition temperature. We further study the scaling behavior of the NLHE with longitudinal conductivity. The linear relationship with opposite slope when temperature is below and above the magnetic transition temperature is uncovered. It reveals that the NLHE originates from skew scattering. Our work provides a platform to search NLHE with larger generation efficiency at higher temperatures.
References in corpus (16)
- Nonlinear Hall Effects
- Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
- Quantum metric-induced nonlinear transport in a topological antiferromagnet
- Band signatures for strong nonlinear Hall effect in bilayer WTe
- Multivariable Scaling for the Anomalous Hall Effect
- Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry
- Nonlinear planar Hall effect
- Quantum frequency doubling in the topological insulator Bi2Se3
- Nonlinear Hall effect with time-reversal symmetry: Theory and material realizations
- Giant -axis nonlinear anomalous Hall effect in T-MoTe and WTe
- Magnetic and transport properties in magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)
- Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material
- Nonlinear spin Hall effect in -symmetric collinear magnets
- Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
- Ferromagnetic MnBi4Te7 obtained with low concentration Sb doping: A promising platform for exploring topological quantum states
- Observation of magnetism induced topological edge state in antiferromagnetic topological insulator MnBi4Te7