Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi${}_2$Te${}_4$ Multilayers

Abstract

The interlayer antiferromagnetic coupling hinders the observation of quantum anomalous Hall effect in magnetic topological insulator MnBi${}_2$Te${}_4$. We demonstrate that interlayer \textit{ferromagnetism} can be established by utilizing the \textit{p}-doping method in MnBi${}_2$Te${}_4$ multilayers. In two septuple-layers system, the interlayer ferromagnetic coupling appears by doping nonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to the redistribution of orbital occupations of Mn. We further find that Mg and Ca elements are the most suitable candidates because of their low formation energy. Although, the \textit{p}-doped two septuple layers exhibit topologically trivial band structure, the increase of layer thickness to three (four) septuple layers with Ca (Mg) dopants leads to the formation of the quantum anomalous Hall effect. Our proposed \textit{p}-doping strategy not only makes MnBi${}_2$Te${}_4$ become an ideal platform to realize the high-temperature quantum anomalous Hall effect without external magnetic field, but also can compensate the electrons from the intrinsic \textit{n}-type defects in MnBi${}_2$Te${}_4$.

References in corpus (43)

• Electric Field Effect in Atomically Thin Carbon Films
• Topological Insulators
• Topological insulators and superconductors
• Berry Phase Effects on Electronic Properties
• Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi${}_2$Te${}_4$
• Theory of ferromagnetic (III,Mn)V semiconductors
• Intrinsic magnetic topological insulators in van der Waals layered MnBi${}_2$Te${}_4$-family materials
• First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Topological axion states in magnetic insulator MnBi${}_2$Te${}_4$ with the quantized magnetoelectric effect
• Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor
• Quantum Anomalous Hall Effect in Hg${}_{1-y}$Mn${}_y$Te Quantum Wells
• Experimental realization of an intrinsic magnetic topological insulator
• Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ films
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• Topological Phases in Two-Dimensional Materials: A Brief Review
• Quantum anomalous Hall effect and related topological electronic states
• The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
• Quantum Anomalous Hall Effect in 2D Organic Topological Insulators
• High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels
• Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
• Quantized Anomalous Hall Effect in Two-Dimensional Ferromagnets - Quantum Hall Effect from Metal -
• Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
• Large Chern Number Quantum Anomalous Hall Effect In Thin-film Topological Crystalline Insulators
• Quantum Anomalous Hall Effect with Higher Plateaus
• Orbital analogue of quantum anomalous Hall effect in $p$-band systems
• Tailoring Magnetic Doping in the Topological Insulator Bi2Se3
• The honeycomb lattice with multi-orbital structure: topological and quantum anomalous Hall insulators with large gaps
• Chern insulators from heavy atoms on magnetic substrates
• High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators
• Tuning carrier type and density in Bi2Se3 by Ca-doping
• Quantum Transport in Magnetic Topological Insulator Thin Films
• Tunable interlayer magnetism and band topology in van der Waals heterostructures of MnBi2Te4-family materials
• Chern Half Metals: A New Class of Topological Materials to Realize the Quantum Anomalous Hall Effect
• Dynamical axion state with hidden pseudospin Chern numbers in MnBi${}_2$Te${}_4$-based heterostructures
• An electron-counting rule to determine the interlayer magnetic coupling of the van der Waals materials
• Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators
• Pb-doped p-type Bi${}_2$Se${}_3$ thin films via interfacial engineering

Cited by in corpus (9)

• Intrinsic and tunable quantum anomalous Hall effect and magnetic topological phases in XYBi2Te5
• Dynamical properties of magnetic topological insulator $T$Bi${}_2$Te${}_4$ ($T=$Mn, Fe): phonons dispersion, Raman active modes, and chiral phonons study
• Ferroelectrically switchable magnetic multistates in MnBi${}_2$Te${}_4$(Bi${}_2$Te${}_3$)${}_n$ and MnSb${}_2$Te${}_4$(Sb${}_2$Te${}_3$)${}_n$ (n = 0, 1) thin films
• Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
• Mechanism of carrier doping induced magnetic phase transitions in two-dimensional materials
• The Layer Hall Effect without External Electric Field
• Non-volatile Electric Control of Magnetic and Topological Properties of MnBi2Te4 Thin Films
• Intrinsic ferromagnetic and antiferromagnetic axion insulators in van der Waals materials Mn\emph{X}${}_2$\emph{B}${}_2$\emph{T}${}_6$ family
• Large-Gap Quantum Anomalous Hall Effect in Monolayer Halide Perovskite