Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators

Abstract

Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi${}_2$Se${}_3$, Bi${}_2$Te${}_3$, and Sb${}_2$Te${}_3$, but only nitrogen-doped Sb${}_2$Te${}_3$ exhibits long-range ferromagnetism and preserve large bulk band gap. We further show that its corresponding thin-film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than the typical temperatures in similar systems. Our proposed \textit{nonmagnetic} doping scheme may shed new light in experimental realization of high-temperature QAHE in topological insulators.

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Cited by in corpus (2)

• Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi${}_2$Te${}_4$ Multilayers
• Theory of Magnetic-Texture-Induced Anomalous Hall Effect on the Surface of Topological Insulators