Room temperature ferromagnetism in carbon-implanted ZnO

Abstract

Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.

13 pages, 3 figs, accepted for publication at Appl. Phys. Lett

References in corpus (4)

• Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor
• Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator
• Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing
• Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO - a phenomenon related to defects?

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• Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators
• Is N-doped SrO magnetic? A first-principles view