MgN: a new promising material for spintronic applications
arXiv:0905.2387 · doi:10.1103/PhysRevB.80.235310
Abstract
Density functional theory calculations demonstrate that rocksalt MgN is a magnetic material at the verge of half-metallicity, with an electronic structure robust against strong correlations and spin-orbit interaction. Furthermore the calculated heat of formation describes the compound as metastable and suggests that it can be fabricated by tuning the relative Mg and N abundance during growth. Intriguingly the equilibrium lattice constant is close to that of MgO, so that MgN is likely to form as an inclusion during the fabrication of N-doped MgO. We then speculate that the MgO/MgN system may represent a unique materials platform for magnetic tunnel junctions not incorporating any transition metals.
References in corpus (8)
- Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor
- Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
- Room temperature ferromagnetism in carbon-implanted ZnO
- Atomic self-interaction correction for molecules and solids
- Magnetism from States in Alkaline Earth Monoxides: Trends with Varying N Impurity Concentration
- Electron doping and magnetic moment formation in N- and C-doped MgO
- Possible d0 ferromagnetism in MgO doped with nitrogen
- Exchange parameters from approximate self-interaction correction scheme