An electron-counting rule to determine the interlayer magnetic coupling of the van der Waals materials
arXiv:2003.09942 · doi:10.1088/2053-1583/ab9ea4
Abstract
In layered magnetic materials, the magnetic coupling between neighboring van der Waals layers is challenging to understand and anticipate, although the exchange interaction inside a layer can be well rationalized for example by the superexchange mechanism. In this work, we elucidate the interlayer exchange mechanism and propose an electron-counting rule to determine the interlayer magnetic order between van der Waals layers, based on counting the -orbital occupation (, where is the number of -electrons at the magnetic cation). With this rule, we classify magnetic monolayers into two groups, type-I () and type-II (), and derive three types of interlayer magnetic coupling for both insulators and metals. The coupling between two type-II layers prefers the antiferromagnetic (AFM) order, while type-I and type-II interfaces favor the ferromagnetic (FM) way. However, for two type-I layers, they display competition between FM and AFM orders and even lead to the stacking dependent magnetism. Additionally, metallic layers can also be incorporated into this rule with a minor correction from the free carrier hopping. Therefore, this rule provides simple guidance to understand the interlayer exchange and further design van der Waals junctions with desired magnetic orders.
arXiv comment7 pages, 4 figures and the supplementary materials attached
References in corpus (20)
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Gate-tunable Room-temperature Ferromagnetism in Two-dimensional FeGeTe
- Magnetic 2D materials and heterostructures
- Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBiTe
- Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2
- Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
- Prediction and observation of the first antiferromagnetic topological insulator
- Controlling magnetism in 2D CrI3 by electrostatic doping
- Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
- Electric-field switching of two-dimensional van der Waals magnets
- Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
- Stacking-Dependent Magnetism in Bilayer CrI
- Switching 2D Magnetic States via Pressure Tuning of Layer Stacking
- Stacking tunable interlayer magnetism in bilayer CrI3
- One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure
- Electronic structure and magnetism of transition metal dihalides: bulk to monolayer
- Ferromagnetic van der Waals crystal VI3
- Layer- and doping-tunable long range ferromagnetic order-ing in two-dimensional CrS2
- Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure
Cited by in corpus (6)
- Tunable interlayer magnetism and band topology in van der Waals heterostructures of MnBi2Te4-family materials
- Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBiTe Multilayers
- Ferroelectrically switchable magnetic multistates in MnBiTe(BiTe) and MnSbTe(SbTe) (n = 0, 1) thin films
- When Energy and Information Revolutions Meet 2D Janus
- Designing layered 2D skyrmion lattices in moiré magnetic hetero-structures
- Electronic Correlations Control Interlayer Coupling and Magnetic Transition in MnBiTe/MnBr Heterostructure