Electronic Correlations Control Interlayer Coupling and Magnetic Transition in MnBi${}_2$Te${}_4$/MnBr${}_3$ Heterostructure

Abstract

Bulk MnBi${}_2$Te${}_4$ (MBT) is an intrinsic antiferromagnetic topological insulator. However, its low Néel temperature of $\sim 25\mathrm{K}$ severely restricts its practical applications. Here, we propose a van der Waals heterostructure composed of monolayer MBT (ML-MBT) and monolayer MnBr${}_3$, an intrinsic Chern insulator possessing a high Curie temperature ($T_{\mathrm{C}}\sim 200\mathrm{K}$). By employing density functional theory calculations and Monte Carlo simulations, we demonstrate that interfacing ML-MBT with MnBr${}_3$ significantly enhances the $T_{\mathrm{C}}$ of ML-MBT by a factor of four to five. Electronic correlations characterized by the Hubbard parameter $U_2$ for Mn-$d$ orbitals in MnBr${}_3$ play a crucial role in governing magnetic coupling within the system. At a moderate correlation strength of $U_2=3.0\mathrm{eV}$, slight structural distortions in MnBr${}_3$ break intralayer symmetry, enabling robust interlayer ferromagnetic coupling and yielding a single, unified magnetic transition. Increasing $U_2$ reduces these structural distortions, weakens interlayer coupling, and induces two distinct magnetic transitions, indicating interlayer magnetic decoupling. Thus, the MBT/MnBr${}_3$ heterostructure offers a novel approach for controlling magnetic order and enhancing the performance of spintronic devices.

References in corpus (23)

• The electronic properties of graphene
• 2D materials and van der Waals heterostructures
• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• A linear response approach to the calculation of the effective interaction parameters in the LDA+U method
• Magnetic 2D materials and heterostructures
• Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2
• Prediction and observation of the first antiferromagnetic topological insulator
• Ising-Type Magnetic Ordering in Atomically Thin FePS3
• Electric-field switching of two-dimensional van der Waals magnets
• Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ films
• Giant and nonreciprocal second harmonic generation from layered antiferromagnetism in bilayer CrI3
• Layer Hall effect in a 2D topological Axion antiferromagnet
• Large magnetic gap at the Dirac point in a Mn-induced Bi${}_2$Te${}_3$ heterostructure
• Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3
• Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure
• Two-Dimensional Room Temperature Ferromagnetic Semiconductors with Quantum Anomalous Hall Effect
• Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
• Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
• Electric field induced topological phase transition and large enhancements of spin-orbit coupling and Curie temperature in two-dimensional ferromagnetic semiconductors
• Two-dimensional magnetic semiconductors with room Curie temperatures
• An electron-counting rule to determine the interlayer magnetic coupling of the van der Waals materials
• Absence of magnetic-proximity effect at the interface of Bi${}_2$Se${}_3$ and (Bi,Sb)${}_2$Te${}_3$ with EuS