2D and 3D topological phases in BiTe$X$ compounds

Abstract

Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi${}_2$Te${}_2$I${}_2$ sextuple layer (SL) and the electronic structure of the Bi${}_2$Te${}_2$I${}_2$ SL on the natural BiTeI substrate. We show that the topological properties of the Bi${}_2$Te${}_2$I${}_2$ SL on this substrate keep ${\mathbb{Z}}_2$ invariant. We also demonstrate that ultra thin centrosymmetric films constructed in the similar manner but from related material BiTeBr are trivial band insulators up to five-SL film thickness. In contrast to Bi${}_2$Te${}_2$I${}_2$ for which the stacking of nontrivial SLs in 3D limit gives a strong topological insulator (TI) phase, strong TI is realized in 3D Bi${}_2$Te${}_2$Br${}_2$ in spite of the SL is trivial. For the last material of the BiTe$X$ ($X$=I,Br,Cl) series, BiTeCl, both 2D and 3D centrosymmetric phases are characterized by topologically trivial band structure.

References in corpus (32)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• $Z_2$ Topological Order and the Quantum Spin Hall Effect
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Quantum Spin Hall Effect
• Epitaxial Growth of Two-Dimensional Stanene
• Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
• Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
• Computing topological invariants without inversion symmetry
• Hidden spin polarization in inversion-symmetric bulk crystals
• Topological Phases in Two-Dimensional Materials: A Brief Review
• One-dimensional Topological Edge States of Bismuth Bilayers
• Structural and electronic properties of germanene on MoS${}_2$
• Anomalous Finite Size Effects on Surface States in the Topological Insulator Bi${}_2$Se${}_3$
• Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
• Robust topological edge states at the perfect surface step edge of topological insulator ZrTe${}_5$
• Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides
• Giant ambipolar Rashba effect in a semiconductor: BiTeI
• Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
• Surface and bulk Fermiology and band dispersion in non-centrosymmetric BiTeI
• Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5
• Sub-nm wide electron channels protected by topology
• One-Dimensional Edge States with Giant Spin Splitting in a Bismuth Thin Film
• Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling
• Infrared and Raman spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure
• Rashba split surface states in BiTeBr
• Relativistic k.p Hamiltonians for centrosymmetric topological insulators from ab initio wave functions
• Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides
• Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)
• Pressure effects on crystal and electronic structure of bismuth tellurohalides
• Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
• Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface
• Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

Cited by in corpus (5)

• Exfoliation of single layer BiTeI flakes
• Uniaxial stress controlled anisotropic Rashba effects and carriers-based currents in BiTeI monolayer semiconductor
• Temperature dependence of the topological phase transition of BiTeI from first principles
• Uniaxial Strain Induced Topological Phase Transition in Bismuth-Tellurohalide-Graphene Heterostructures
• Spin Filtering via Resonant Reflection of Relativistic Surface States