Structural and electronic properties of germanene on MoS${}_2$

Abstract

To date, germanene has only been synthesized on metallic substrates. A metallic substrate is usually detrimental for the two-dimensional Dirac nature of germanene because the important electronic states near the Fermi level of germanene can hybridize with the electronic states of the metallic substrate. Here we report the successful synthesis of germanene on molybdenum disulfide (MoS${}_2$), a band gap material. Pre-existing defects in the MoS${}_2$ surface act as preferential nucleation sites for the germanene islands. The lattice constant of the germanene layer (3.8 $\pm$ 0.2 Å) is about 20\% larger than the lattice constant of the MoS${}_2$ substrate (3.16 Å). Scanning tunneling spectroscopy measurements and density functional theory calculations reveal that there are, besides the linearly dispersing bands at the $K$ points, two parabolic bands that cross the Fermi level at the $\Gamma$ point.

References in corpus (11)

• Electric Field Effect in Atomically Thin Carbon Films
• Quantum Spin Hall Effect in Graphene
• $Z_2$ Topological Order and the Quantum Spin Hall Effect
• Van der Waals density functionals applied to solids
• Two and one-dimensional honeycomb structures of silicon and germanium
• Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Electronic structure of silicon-based nanostructures
• Germanene termination of Ge${}_2$Pt crystals on Ge(110)
• Two-dimensional Dirac signature of germanene
• ${\mathbb{Z}}_2$ invariance of Germanene on MoS${}_2$ from first principles

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