Coexistence of strongly buckled germanene phases on Al(111)
arXiv:1711.08300 · doi:10.3762/bjnano.8.195
Abstract
We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (33) or ()R19.1° reconstructions. First-principles calculations based on density functional theory suggest an atomic model consisting of a strongly buckled (22) germanene layer, which is stable in two different orientations on Al(111). Simulated STM of both orientations fit nicely with experimental STM images and the Ge 3d core-level data decomposed into four components is consistent with the suggested model.
arXiv comment8 pages, 4 figures, 1 support information
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