Coexistence of strongly buckled germanene phases on Al(111)

Abstract

We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3$\times$3) or ($\sqrt{7}$$\times$$\sqrt{7}$)R$\pm$19.1° reconstructions. First-principles calculations based on density functional theory suggest an atomic model consisting of a strongly buckled (2$\times$2) germanene layer, which is stable in two different orientations on Al(111). Simulated STM of both orientations fit nicely with experimental STM images and the Ge 3d core-level data decomposed into four components is consistent with the suggested model.

8 pages, 4 figures, 1 support information

References in corpus (4)

• Germanene: a novel two-dimensional Germanium allotrope akin to Graphene and Silicene
• Structural and electronic properties of germanene on MoS${}_2$
• Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
• Germanene termination of Ge${}_2$Pt crystals on Ge(110)

Cited by in corpus (4)

• Investigation of the atomic and electronic structures of highly ordered two-dimensional germanium on Au(111)
• Growth of germanium-silver surface alloys followed by in situ scanning tunneling microscopy: Absence of germanene formation
• Identifying the Alloy Structures of Germanene Grown on Al(111) Surface
• Structure of germanene/Al(111): a two-layers surface alloy