Uniaxial stress controlled anisotropic Rashba effects and carriers-based currents in BiTeI monolayer semiconductor

Abstract

Manipulation of Rashba effects in two-dimensional (2D) electron systems is highly desirable for controllable applications in spintronics and optoelectronics. Here, by combining first-principles investigation and model analysis, we use uniaxial stress to control BiTeI monolayer as a Rashba 2D semiconductor for useful spin and transport properties. We find that the stress-driven electron system can be described by an effective anisotropic Rashba model including all the three Pauli matrixes, and uniaxial stress allows an out-of-plane spin component. When appropriate electron carriers are introduced into the monolayer, an in-plane electric field can induce a charge current and three spin current components (including that based on the out-of-plane spin) because of the reduced symmetry. Therefore, uniaxial stress can be used to control such Rashba 2D electron systems as the BiTeI monolayer for seeking promising devices.

arXiv comment7 pages, 4 figures

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Cited by in corpus (5)

• In-plane Hall effect in two-dimensional helical electron systems
• Anisotropic Rashba splitting dominated by out-of-plane spin polarization in two-dimensional Janus $X{A}_{2}Y$ ($A$= Si, Sn, Ge; $X,Y$= Sb, Bi) with surface imperfection
• Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents
• Two-dimensional Dirac semiconductor and its material realization
• Possible structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2 under uniaxial stress