Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting
arXiv:1205.3005 · doi:10.1103/PhysRevB.86.085204
Abstract
In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive -dependent soft x-ray angle resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of meV at the conduction-band-minimum and valence-band-maximum located in the plane. It provides the first direct experimental evidence of the 3D Rashba-type spin splitting in a bulk compound.
9 pages, 4 figures
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Cited by in corpus (24)
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