An effective model for the electronic and optical properties of stanene
arXiv:1706.01028 · doi:10.1103/PhysRevMaterials.1.054006
Abstract
The existence of several 2D materials with heavy atoms in their composition has been recently demonstrated. The electronic and optical properties of these materials can be accurately computed with numerically intensive density functional theory methods. However, it is desirable to have simple effective models that can accurately describe these properties at low energies. Here we present an effective model for stanene that is reliable for electronic and optical properties for photon energies up to 1.1 eV. For this material, we find that a quadratic model with respect to the lattice momentum is the best suited for calculations based on the bandstructure, even with respect to band warping. We also find that splitting the two spin-z subsectors is a good approximation, which indicates that the lattice buckling can be neglected in calculations based on the bandstructure. We illustrate the applicability of the model by computing the linear optical injection rates of carrier and spin densities in stanene. Our calculations indicate that an incident circularly polarized optical field only excites electrons with spin that matches its helicity.
arXiv comment13 pages, 7 figures
References in corpus (21)
- The electronic properties of graphene
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Maximally-localized generalized Wannier functions for composite energy bands
- Optimized norm-conserving Vanderbilt pseudopotentials
- Two and one-dimensional honeycomb structures of silicon and germanium
- Maximally localized Wannier functions: Theory and applications
- Epitaxial Growth of Two-Dimensional Stanene
- Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin
- Large-gap quantum spin Hall insulators in tin films
- Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
- Topological Insulator and Helical Zero Mode in Silicene under Inhomogeneous Electric Field
- Monolayer Topological Insulators: Silicene, Germanene and Stanene
- Performance of arsenene and antimonene double-gate MOSFETs from first principles
- Masses in graphene-like two-dimensional electronic systems: topological defects in order parameters and their fractional exchange statistics
- Spin-Valley Optical Selection Rule and Strong Circular Dichroism in Silicene
- Landau levels of single layer and bilayer phosphorene
- Quantitative relationship between polarization differences and the zone-averaged shift photocurrent
- Coherent control of optical injection of spin and currents in topological insulators
- All-optical injection of charge, spin and valley currents in monolayer transition metal dichalcogenides
- Masses and Majorana fermions in graphene
- Topological qubits in graphenelike systems