Buckling effects in AlN monolayers: Shifting and enhancing optical characteristics from the UV to the near visible light range

Abstract

The structural, electronic, and optical properties of flat and buckled AlN monolayers are investigated using first-principles approaches. The band gap of a flat AlN monolayer is changed from an indirect one to a direct one, when the planar buckling increases, primarily due to diminishing sp${}^2$ overlapping and bond symmetry breaking in the conversion to sp${}^3$ bonds. The sp${}^3$ hybridization thus results in a stronger $\sigma \text{-}\pi$ bond rather than a $\sigma \text{-}\sigma$ covalent bond. The calculations of the phonon band structure indicates that the buckled AlN monolayers are structurally and dynamically stable. The optical properties, such as the dielectric function, the refractive index, and the optical conductivity of an AlN monolayer are evaluated for both flat systems and those impacted with planar buckling. The flat AlN monolayer has outstanding optical characteristics in the Deep-UV and absorbs more effectively in the UV spectrum due to its large band gap. The results reveal that optical aspects are enhanced along different directions of light polarization, with a considerable shift in the optical spectrum from Deep-UV into the visible range. Additionally, depending on the polarization direction of the incoming light, increased planar buckling enhances the optical conductivity in both the visible and the Deep-UV domains. The ability to modify the optical and electronic properties of these essential 2D materials using planar buckling technique opens up new technological possibilities, particularly for optoelectronic devices.

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