Gapped Electronic Structure of Epitaxial Stanene on InSb(111)

Abstract

Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

15 pages, 4 figures

References in corpus (8)

• The electronic properties of graphene
• 2D materials and van der Waals heterostructures
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Nonlocal edge state transport in the quantum spin Hall state
• Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
• Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
• A precise method for visualizing dispersive features in image plots
• Strain-Induced Band Engineering in Monolayer Stanene on Sb(111)

Cited by in corpus (9)

• Atomically Thin Quantum Spin Hall Insulators
• Stanene: A Good Platform for Topological Insulator and Topological Superconductor
• Tailoring the topological surface state in ultrathin $\alpha$-Sn (111) films
• Observation of quantum spin Hall states in Ta${}_2$Pd${}_3$Te${}_5$
• Optical absorption measurement of spin Berry curvature and spin Chern marker
• First Principles Assessment of CdTe as a Tunnel Barrier at the $\alpha$-Sn/InSb Interface
• Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A
• Epitaxial binding and strain effects of monolayer stanene on the Al${}_2$O${}_3$(0001) surface
• Combining quantum spin hall effect and superconductivity in few-layer stanene