Ultra-steep slope cryogenic FETs based on bilayer graphene

Abstract

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 $\mu$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.

22 pages, 18 figures

References in corpus (7)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of bilayer graphene
• Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Inflection Phenomenon in Cryogenic MOSFET Behavior
• Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
• Fractional quantum Hall effect in CVD-grown graphene

Cited by in corpus (6)

• Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
• Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
• MaskTerial: A Foundation Model for Automated 2D Material Flake Detection
• Capturing magic angles in twisted bilayer graphene from information theory markers
• Limiting performance of graphene bilayer sub-terahertz detectors at large induced band gap
• Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe${}_2$