Fractional quantum Hall effect in CVD-grown graphene

Abstract

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to ${\nu }^{\ast }=4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.

arXiv comment6 pages, 4 figures

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• Theory of Competing Charge Density Wave, Kekule and Antiferromagnetic ordered Fractional Quantum Hall states in Graphene aligned with Boron Nitride
• Ultra-steep slope cryogenic FETs based on bilayer graphene
• Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene
• Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe${}_2$
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