Dry transfer of CVD graphene using MoS-based stamps
arXiv:1706.00422 · doi:10.1002/pssr.201700136
Abstract
Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low overall doping. Here, we report that not only hBN, but also flakes of molybdenum disulfide (MoS) can be used to dry transfer graphene. This, on one hand, allows for the fabrication of complex van-der-Waals heterostructures using CVD graphene combined with different two-dimensional materials and, on the other hand, can be a route towards a scalable dry transfer of CVD graphene. The resulting heterostructures are studied using low temperature transport measurements revealing a strong charge carrier density dependence of the carrier mobilities (up to values of 12,000 cm/(Vs)) and the residual charge carrier density fluctuations near the charge neutrality point when changing the carrier density in the MoS by applying a top gate voltage.
arXiv comment5 pages, 3 figures
References in corpus (20)
- The Raman Fingerprint of Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Ultrahigh electron mobility in suspended graphene
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Graphene Spintronics
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Spin-Orbit Proximity Effect in Graphene
- Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
- Raman spectroscopy as probe of nanometer-scale strain variations in graphene
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Ballistic transport exceeding 28 μm in CVD grown graphene
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- Large Area Single Crystal (0001) Oriented MoS2 Thin Films
- Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
- Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
- Identifying suitable substrates for high-quality graphene-based heterostructures
- Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride
- Encapsulated graphene based Hall sensors on foil with increased sensitivity