Dry transfer of CVD graphene using MoS${}_2$-based stamps

Abstract

Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low overall doping. Here, we report that not only hBN, but also flakes of molybdenum disulfide (MoS${}_2$) can be used to dry transfer graphene. This, on one hand, allows for the fabrication of complex van-der-Waals heterostructures using CVD graphene combined with different two-dimensional materials and, on the other hand, can be a route towards a scalable dry transfer of CVD graphene. The resulting heterostructures are studied using low temperature transport measurements revealing a strong charge carrier density dependence of the carrier mobilities (up to values of 12,000 cm${}^2$/(Vs)) and the residual charge carrier density fluctuations near the charge neutrality point when changing the carrier density in the MoS${}_2$ by applying a top gate voltage.

5 pages, 3 figures

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Cited by in corpus (1)

• Fractional quantum Hall effect in CVD-grown graphene