65 citations · 305 across the 28 of their papers we have counts for
30 papers
Twist as a Mechanical Switch for Reconfigurable Stacking in h-BN
Gautham Vijayan, Zhaoheng Zhang, Kenji Watanabe +5
Twistronics of layered materials has emerged as a highly active field due to its profound implications for quantum electronics and materials engineering. However, the controllable…
Polarization engineered all 2D Graphene/Ferroelectric hybrid for persistence-free photoresponse
Navkiranjot Kaur Gill, Shaili Sett, Saloni Kakkar +3
Graphene-based van der Waals hybrid photodetectors typically work on trap-mediated photogating mechanism, exhibiting high sensitivity, but under-perform in the fast detection of re…
Observation of Unconventional Ferroelectricity in Non-Moir'\e Graphene on Hexagonal Boron Nitride Boundaries and Interfaces
Tianyu Zhang, Yueyang Wang, Hongxia Xue +3
Interfacial interactions in two parallel-stacked hexagonal boron-nitride (hBN) layers facilitate sliding ferroelectricity, enabling novel device functionalities. Additionally, when…
Defect Engineered Hexagonal-Boron Nitride Enables Ionic Conduction for Lithium Metal Batteries
Yecun Wu, Yan-Kai Tzeng, Hao Chen +7
The practical implementation of lithium-metal anodes has been hindered by uncontrollable dendrite formation and interfacial instability. This study presents a defect-engineering ap…
Sliding Disassembly of van der Waals Heterostructures
Jordan Pack, Karl V. Falb, Sanat Ghosh +13
Many recent advances in our understanding of two-dimensional (2D) electron systems stem from van der Waals (vdW) heterostructures. The assembly process relies on the weak bonding a…
Dynamically tunable hydrodynamic transport in boron nitride-encapsulated graphene
Akash Gugnani, Aniket Majumdar, Kenji Watanabe +2
Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality de…
In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
Hitesh Agarwal, Antoine Reserbat-Plantey, David Barcons Ruiz +10
Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually…
Laser patterning of the room temperature van der Waals ferromagnet 1-CrTe
Tristan Riccardi, Suman Sarkar, Anike Purbawati +19
Lamellar crystalline materials, whose layers are bond by van der Waals forces, can be stacked to form ultrathin artificial heterostructures, and in particular vertical magnetic jun…
Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
Corinne Steiner, Rebecca Rahmel, Frank Volmer +9
We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters…
On the origin of anomalous hysteresis in graphite/boron nitride transistors
Dacen Waters, Derek Waleffe, Ellis Thompson +9
Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtuall…
Giant light emission enhancement in strain-engineered InSe/MS (M=Mo,W) van der Waals heterostructures
Elena Blundo, Marzia Cuccu, Federico Tuzi +11
Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlimited possibilities to play with layer number, order and twist angle in vdW heterostru…
Ultra-steep slope cryogenic FETs based on bilayer graphene
E. Icking, D. Emmerich, K. Watanabe +5
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum informati…
Interlayer charge transfer in graphene 2D polyimide heterostructures
Francesca Falorsi, Shuangjie Zhao, Kejun Liu +12
The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying…
Tailored topotactic chemistry unlocks heterostructures of magnetic intercalation compounds
Samra Husremović, Oscar Gonzalez, Berit H. Goodge +15
The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular im…
Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics
Bosai Lyu, Jiajun Chen, Sen Wang +21
Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic de…
Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces
Marisa Hocking, Christina E. Henzinger, Steven Tran +6
New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/…
The Defects Genome of 2D Janus Transition Metal Dichalcogenides
Mohammed Sayyad, Jan Kopaczek, Carmem M. Gilardoni +9
Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structu…
Direct visualization of defect-controlled diffusion in van der Waals gaps
Joachim Dahl Thomsen, Yaxian Wang, Henrik Flyvbjerg +5
Diffusion processes govern fundamental phenomena such as phase transformations, doping, and intercalation in van der Waals (vdW) bonded materials. Here, we quantify the diffusion d…
Elementary excitations of single-photon emitters in hexagonal Boron Nitride
Jonathan Pelliciari, Enrique Mejia, John M. Woods +8
Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable, and stable emitters in hexagonal boro…
Towards a comprehensive understanding of the low energy luminescence peak in 2D materials
Keerthana S Kumar, Ajit Kumar Dash, Hasna Sabreen H +6
An intense low-energy broad luminescence peak (L-peak) is usually observed in 2D transition metal dichalcogenides (TMDs) at low temperatures. L-peak has earlier been attributed to…
Full-dry flipping transfer method for van der Waals heterostructure
Dohun Kim, Soyun Kim, Yanni Cho +6
We present a novel flipping transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and…
Spin and Valley Polarized Multiple Fermi Surfaces of α-RuCl/Bilayer Graphene Heterostructure
Soyun Kim, Jeonghoon Hong, Kenji Watanabe +4
We report the transport properties of -RuCl/bilayer graphene heterostructures, where carrier doping is induced by a work function difference, resulting in distinct electron…
Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Alessandro Catanzaro, Armando Genco, Charalambos Louca +13
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transi…
Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs
Yinjiang Shao, Jian Zhou, Ning Xu +5
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properti…