activity
20112022
most citedSpectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors

80 citations · 253 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2022★ 6 cited

Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

Himadri Pandey, Jorge Daniel Aguirre Morales, Satender Kataria +6

We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) g…

cond-mat.mtrl-sci2022★ 73 cited

Contact Resistance Study of Various Metal Electrodes with CVD Graphene

Amit Gahoi, Stefan Wagner, Andreas Bablich +3

In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying…

physics.app-ph2018★ 53 cited

Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering

Vikram Passi, Amit Gahoi, Enrique G. Marin +5

A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to…

cond-mat.mes-hall2018

Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons

Vikram Passi, Amit Gahoi, Boris V. Senkovskiy +4

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are…

cond-mat.mtrl-sci2017

Electrical characterization of structured platinum diselenide devices

Chanyoung Yim, Vikram Passi, Max C. Lemme +4

Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when…

cond-mat.mes-hall2016★ 15 cited

Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor

K. Smaali, D. Guerin, V. Passi +7

Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin…