62 citations · 234 across the 6 of their papers we have counts for
7 papers
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Lukas Völkel, Dennis Braun, Melkamu Belete +8
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…
Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes
Sarah Riazimehr, Melkamu Belete, Satender Kataria +2
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/…
Electron Transport across Vertical Silicon / MoS / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Melkamu Belete, Olof Engström, Sam Vaziri +4
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS) and graphene are investigated with respect to the vertical current conduction mechanism. The measured…
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
Melkamu Belete, Satender Kataria, Aykut Turfanda +4
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS) as the active material. The vertical heterostructures consist of…
Dielectric Properties and Ion Transport in Layered MoS_{2} Grown by Vapor-Phase Sulfurization
M. Belete, S. Kataria, U. Koch +5
Electronic and dielectric properties of vapor-phase grown MoS_{2} have been investigated in metal/MoS_{2}/silicon capacitor structures by capacitance-voltage and conductancevoltage…
Going Ballistic: Graphene Hot Electron Transistors
Sam Vaziri, Anderson D. Smith, Mikael Östling +11
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graph…
Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors
Sam Vaziri, Melkamu Belete, Eugenio Dentoni Litta +4
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. I…