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20112022
most citedElectromechanical Piezoresistive Sensing in Suspended Graphene Membranes

416 citations · 2.5k across the 21 of their papers we have counts for

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13 papers · 1 filter

cond-mat.mes-hall2021

Vibrational Properties of a Naturally Occurring Semiconducting van der Waals heterostructure

V. Z. Costa, Liangbo Liang, Sam Vaziri +3

We present vibrational properties of Franckeite, which is a naturally occurring van der Waals heterostructure consisting of two different semiconducting layers. Franckeite is a com…

cond-mat.mes-hall2020★ 21 cited

Ultrahigh Doping of Graphene Using Flame-Deposited MoO3

Sam Vaziri, Victoria Chen, Lili Cai +5

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported…

cond-mat.mes-hall2018★ 21 cited

Thermal Transport Across Graphene Step Junctions

Miguel Munoz Rojo, Zuanyi Li, Charles Sievers +8

Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. He…

cond-mat.mes-hall2017★ 160 cited

Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

Anderson D. Smith, Frank Niklaus, Alan Paussa +9

Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentall…

cond-mat.mes-hall2015★ 334 cited

Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout

Anderson David Smith, Karim Elgammal, Frank Niklaus +11

We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si waf…

cond-mat.mes-hall2015★ 41 cited

Going Ballistic: Graphene Hot Electron Transistors

Sam Vaziri, Anderson D. Smith, Mikael Östling +11

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graph…

cond-mat.mes-hall2015★ 62 cited

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Sam Vaziri, Melkamu Belete, Eugenio Dentoni Litta +4

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. I…

cond-mat.mes-hall2015★ 294 cited

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

Grzegorz Lupina, Julia Kitzmann, Ioan Costina +15

Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform mus…

cond-mat.mes-hall2014★ 16 cited

Static Non-linearity in Graphene Field Effect Transistors

Saul Rodriguez, Anderson Smith, Sam Vaziri +3

The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD…

cond-mat.mes-hall2013★ 85 cited

A Comprehensive Graphene FET Model for Circuit Design

Saul Rodriguez, Sam Vaziri, Anderson Smith +4

During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electron…

cond-mat.mes-hall2013★ 416 cited

Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

A. D. Smith, F. Niklaus, A. Paussa +9

Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively de…

cond-mat.mes-hall2012★ 27 cited

A Graphene-based Hot Electron Transistor

Sam Vaziri, Grzegorz Lupina, Christoph Henkel +6

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially comp…

cond-mat.mes-hall2011★ 29 cited

RF Performance Projections of Graphene FETs vs. Silicon MOSFETs

Saul Rodriguez, Sam Vaziri, Mikael Ostling +3

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio fre…