Modulation of quantum geometry and its coupling to pseudo-electric field by dynamic strain
arXiv:2512.24681 · doi:10.1038/s41467-026-70893-3
Abstract
Two-dimensional materials are a fertile ground for exploring quantum geometric phenomena, with Berry curvature and its first moment, the Berry curvature dipole, playing a central role in their electronic response. These geometric properties influence electronic transport and result in the anomalous and nonlinear Hall effects, and are typically controlled using static electric fields or strain. However, the possibility of modulating quantum geometric quantities in real-time remains unexplored. Here, we demonstrate the dynamic modulation of Berry curvature and its moments, as well as the generation of a pseudo-electric field using time-dependent strain. By placing heterostructures on a membrane, we introduce oscillatory strain together with an in-plane AC electric field and measure Hall signals that are modulated at linear combinations of the frequencies of strain and electric field. Our measurements reveal modulation of Berry curvature and its first moment. Notably, we provide direct experimental evidence of pseudo-electric field that results in an unusual dynamic strain-induced Hall response. This approach opens up a new pathway for controlling quantum geometry on demand, moving beyond conventional static perturbations. The pseudo-electric field provides a framework for external electric field-free anomalous Hall response and opens new avenues for probing the topological properties.
26 pages, 5 figures, 5 extended figures
References in corpus (36)
- Anomalous Hall effect
- Weyl and Dirac Semimetals in Three Dimensional Solids
- Moire bands in twisted double-layer graphene
- Valley contrasting physics in graphene: magnetic moment and topological transport
- The Valley Hall Effect in MoS2 Transistors
- A tight-binding approach to uniaxial strain in graphene
- Gauge fields in graphene
- Observation of the nonlinear Hall effect under time reversal symmetric conditions
- Correlated states in twisted double bilayer graphene
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Designing Flat Band by Strain
- Band structure and topological property of twisted double bilayer graphenes
- Piezoelectric-based apparatus for strain tuning
- Strain-engineering of Berry curvature dipole and valley magnetization in monolayer MoS
- Strain-Enhanced Mobility of Monolayer MoS2
- Berry curvature dipole senses topological transition in a moiré superlattice
- Moiré Flat Bands in Twisted Double Bilayer Graphene
- Berry phase modification to the energy spectrum of excitons
- Pseudo magnetic field in strained graphene: revisited
- Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels and Confined States
- Pseudo-electromagnetic fields in topological semimetals
- Tunable large Berry dipole in strained twisted bilayer graphene
- Giant nonlinear Hall effect in strained twisted bilayer graphene
- Tunable moiré materials for probing Berry physics and topology
- Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe
- Revealing Quantum Geometry in Nonlinear Quantum Materials
- Intervalley coherence and intrinsic spin-orbit coupling in rhombohedral trilayer graphene
- Tunable bandwidths and gaps in twisted double bilayer graphene system on the verge of correlations
- Acoustically Induced Giant Synthetic Hall Voltages in Graphene
- Quantum Hall response to time-dependent strain gradients in graphene
- Origin of band flatness and constraints of higher Chern numbers
- Crossed Nonlinear Dynamical Hall Effect in Twisted Bilayers
- Continuously tunable uniaxial strain control of van der Waals heterostructure devices
- Pseudo Electric Field and Pumping Valley Current in Graphene Nano-bubbles
- Quantum geometric moment encodes stacking order of moiré matter