Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
arXiv:1611.04774 · doi:10.1039/C6CC07678E
Abstract
We present an easy drop-casting based functionalization of MoS2-based photodetectors that results in an enhancement of the photoresponse of about four orders of magnitude, reaching responsivities up to 100 A/W. The functionalization is technologically trivial, air-stable, fully reversible and reproducible, and opens the door to the combination of 2D-materials with molecular dyes for the development of high performance photodetectors.
arXiv comment20 pages, main text and supporting information, 3 figures main text, 7 figures supporting information
References in corpus (17)
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Atomically thin p-n junctions with van der Waals heterointerfaces
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
- Local strain engineering in atomically thin MoS2
- Photovoltaic effect in an electrically tunable van der Waals heterojunction
- Photocurrent generation with two-dimensional van der Waals semiconductors
- The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- Mechanisms of photoconductivity in atomically thin MoS2
- Laser-thinning of MoS2: on demand generation of a single-layer semiconductor
- Measurement of mobility in dual-gated MoS2 transistors
- High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics
- Intrinsic carrier mobility of multi-layered MoS field-effect transistors on SiO