Gate-Tunable Quantum Dot in a High Quality Single Layer MoS${}_2$ Van der Waals Heterostructure

Abstract

We have fabricated an encapsulated monolayer MoS${}_2$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm${}^2$/Vs at a density of 7 $\times$ 10${}^{12}$ cm${}^{-2}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of the hBN we are able to confine electrons in MoS${}_2$ and observe the Coulomb blockade effect. By tuning the middle gate voltage we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.

References in corpus (13)

• Atomically thin MoS2: A new direct-gap semiconductor
• 2D materials and van der Waals heterostructures
• Quantum Computation with Quantum Dots
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Electron transport through double quantum dots
• Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Electronic compressibility of layer polarized bilayer graphene
• Tunnelling Spectroscopy of Andreev States in Graphene
• A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
• Electrotunable artificial molecules based on van der Waals heterostructures
• Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures
• Spin-Degenerate Regimes for Single Quantum Dots in Transition Metal Dichalcogenide Monolayers

Cited by in corpus (31)

• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS${}_2$
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Single layer MoS2 nanoribbon field effect transistor
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Absence of inter-layer tunnel coupling of $K$-valley electrons in bilayer MoS${}_2$
• Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe${}_2$
• Gate controlled quantum dots in monolayer WSe2
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Superconducting contacts to a monolayer semiconductor
• The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
• Electric Dipole Spin Resonance of 2D Semiconductor Spin Qubits
• Atomistic $T$-matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
• Gate defined quantum dot realized in a single crystalline InSb nanosheet
• Weak localization in boron nitride encapsulated bilayer MoS${}_2$
• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• Coulomb Blockade Spectroscopy of a ${\mathrm{MoS}}_2$ Nanotube
• Valley and spin polarized broken symmetry states of interacting electrons in gated MoS${}_2$ quantum dots
• Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
• Signature of spin-resolved quantum point contact in p-type trilayer WSe${}_2$ van der Waals heterostructure
• Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator
• Molecular Switching Operation in Gate Constricted Interface of MoS${}_2$ and hBN Heterostructure
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Low-temperature environments for quantum computation and quantum simulation
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Valley-selective energy transfer between quantum dots in atomically thin semiconductors
• Interacting holes in a gated WSe${}_2$ quantum channel: valley correlations and zigzag Wigner crystal
• Theory of field-modulated spin-valley-orbital pseudospin physics
• Electrically tunable MoSe${}_2$/WSe${}_2$ heterostructure-based quantum dot
• High magnetic field spin-valley-split Shubnikov-de Haas oscillations in a WSe${}_2$ monolayer
• Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides