activity
20162020
most citedFermi polaron-polaritons in charge-tunable atomically thin semiconductors

605 citations · 1.5k across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2020★ 237 cited

Observation of Wigner crystal of electrons in a monolayer semiconductor

T. Smoleński, P. E. Dolgirev, C. Kuhlenkamp +9

When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two dimensional systems were predicted to spontaneously break continuous translation…

cond-mat.mtrl-sci2020★ 39 cited

Coupling interlayer excitons to whispering gallery modes in van der Waals heterostructures

Ronja Khelifa, Patrick Back, Nikolaus Flöry +6

Van der Waals heterostructures assembled from two-dimensional materials offer a promising platform to engineer structures with desired optoelectronic characteristics. Here we use w…

cond-mat.mes-hall2019★ 109 cited

Interacting Polaron-Polaritons

Li Bing Tan, Ovidiu Cotlet, Andrea Bergschneider +5

Two dimensional semiconductors provide an ideal platform for exploration of linear exciton and polariton physics, primarily due to large exciton binding energy and strong light-mat…

cond-mat.mes-hall2018★ 79 cited

Shubnikov-de Haas oscillations in optical conductivity of monolayer MoSe

T. Smoleński, O. Cotlet, A. Popert +8

We report polarization-resolved resonant reflection spectroscopy of a charge-tunable atomically-thin valley semiconductor hosting tightly bound excitons coupled to a dilute system…

cond-mat.mes-hall2018★ 115 cited

Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS

Riccardo Pisoni, Andor Kormányos, Matthew Brooks +12

The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band st…

cond-mat.mes-hall2018★ 78 cited

Gate-Tunable Quantum Dot in a High Quality Single Layer MoS Van der Waals Heterostructure

Riccardo Pisoni, Zijin Lei, Patrick Back +7

We have fabricated an encapsulated monolayer MoS device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility…