Valley-selective energy transfer between quantum dots in atomically thin semiconductors
arXiv:2008.02028 · doi:10.1038/s41598-020-73688-8
Abstract
In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By assuming parabolic confinement for both the electron and the hole, we derive model wave functions for the relative and the center-of-mass motions of electron-hole pairs, and investigate theoretically resonant energy transfer among excitons localized in two neighboring quantum dots. We quantify the probability of energy transfer for a direct-gap transition by assuming that the interaction between two quantum dots is described by a Coulomb potential, which allows us to include all relevant multipole terms of the interaction. We demonstrate the structural control of the valley-selective energy transfer between quantum dots.
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