Weak localization in boron nitride encapsulated bilayer MoS${}_2$

Abstract

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS${}_2$. From the analysis we obtain information regarding the phase-coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase-coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to non-encapsulated MoS${}_2$. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.

References in corpus (3)

• Weak localisation in graphene flakes
• Electric-field switchable second-harmonic generation in bilayer MoS${}_2$ by inversion symmetry breaking
• Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides

Cited by in corpus (1)

• Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets