Weak localization in boron nitride encapsulated bilayer MoS${}_2$

Abstract

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS${}_2$. From the analysis we obtain information regarding the phase-coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase-coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to non-encapsulated MoS${}_2$. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.

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Cited by in corpus (8)

• Quantum interference effect on exciton transport in monolayer semiconductors
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• Intrinsic and extrinsic spin-orbit coupling and spin relaxation in monolayer PtSe${}_2$
• Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets
• Evidence of the Coulomb gap in the density of states of MoS${}_2$
• Phase coherent transport in bilayer and trilayer MoS2
• Monolayer transition metal dichalcogenides under finite-pulse polarized radiation
• Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices