Intrinsic and extrinsic spin-orbit coupling and spin relaxation in monolayer PtSe${}_2$

Abstract

Monolayer PtSe${}_2$ is a semiconducting transition metal dichalcogenide characterized by an indirect band gap, space inversion symmetry, and high carrier mobility. Strong intrinsic spin-orbit coupling and the possibility to induce extrinsic spin-orbit fields by gating make PtSe${}_2$ attractive for fundamental spin transport studies as well as for potential spintronics applications. We perform a systematic theoretical study of the spin-orbit coupling and spin relaxation in this material. Specifically, we employ first principles methods to obtain the basic orbital and spin-orbital properties of PtSe${}_2$, also in the presence of an external transverse electric field. We calculate the spin mixing parameters $b^2$ and the spin-orbit fields $\Omega$ for the Bloch states of electrons and holes. This information allows us to predict the spin lifetimes due to the Elliott-Yafet and D'yakonov-Perel mechanisms. We find that $b^2$ is rather large, on the order of $10^{-2}$ and $10^{-1}$, while $\Omega$ varies strongly with doping, being about $10^3-10^4$\,ns${}^{-1}$ for %typical Fermi levels in the interval $(10-100)$ meV, carrier density in the interval $10^{13}-10^{14}$\,cm${}^{-2}$ at the electric field of 1 V/nm. We estimate the spin lifetimes to be on the picosecond level.

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Cited by in corpus (4)

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• Hydrostatic pressure control of the spin-orbit proximity effect, spin relaxation, and thermoelectricity in a phosphorene-WSe${}_2$ heterostructure
• Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe${}_2$ and graphene
• Investigation of the intrinsic hidden spin texture and spin-state segregation in centrosymmetric monolayer dichalcogenide: effectiveness of the electric-field approach