Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe${}_2$

Abstract

We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe${}_2$. The devices were operated with gates above and below the WSe${}_2$ layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe${}_2$ dot, magnetic field dependence of excited state energies was used to estimate $g$-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe${}_2$ for application as qubits.

References in corpus (44)

• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Spins in few-electron quantum dots
• Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
• Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
• Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
• Moiré Excitons in Van der Waals Heterostructures
• Signatures of moiré-trapped valley excitons in MoSe${}_2$/WSe${}_2$ heterobilayers
• Silicon Quantum Electronics
• Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
• Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
• Large-scale quantum-emitter arrays in atomically thin semiconductors
• Hidden spin polarization in inversion-symmetric bulk crystals
• Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Magnetic brightening and control of dark excitons in monolayer WSe2
• Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers
• Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
• High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors
• Strain-induced spatial and spectral isolation of quantum emitters in mono- and bi-layer WSe2
• Direct Measurement of Exciton Valley Coherence in Monolayer WSe${}_2$
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe${}_2$: Landau level degeneracy, effective mass, and negative compressibility
• A valley-spin qubit in a carbon nanotube
• Tunable effective g-factor in InAs nanowire quantum dots
• Gate controlled spin-valley locking of resident carriers in WSe2 monolayers
• Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots
• Electrically Protected Valley-Orbit Qubits in Silicon
• Long valley lifetime of dark excitons in single-layer WSe2
• A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Gate-Tunable Quantum Dot in a High Quality Single Layer MoS${}_2$ Van der Waals Heterostructure
• Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction
• Intrinsic circular polarization in centrosymmetric stacks of transition-metal dichalcogenides
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Optical control of a single spin-valley in charged WSe${}_2$ quantum dots
• Electrotunable artificial molecules based on van der Waals heterostructures
• Valley qubit in gated MoS${}_2$ monolayer quantum dot
• Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• Probe and Control of the Reservoir Density of States in Single-Electron Devices
• Spin-Degenerate Regimes for Single Quantum Dots in Transition Metal Dichalcogenide Monolayers
• Coulomb Blockade Spectroscopy of a ${\mathrm{MoS}}_2$ Nanotube
• Theory of field-modulated spin-valley-orbital pseudospin physics

Cited by in corpus (12)

• Nanomaterials for Quantum Information Science and Engineering
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Gate controlled quantum dots in monolayer WSe2
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• Signature of spin-resolved quantum point contact in p-type trilayer WSe${}_2$ van der Waals heterostructure
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene
• Interacting holes in a gated WSe${}_2$ quantum channel: valley correlations and zigzag Wigner crystal
• Electrically tunable MoSe${}_2$/WSe${}_2$ heterostructure-based quantum dot