Theory of field-modulated spin-valley-orbital pseudospin physics

Abstract

Pioneering studies in transition metal dichalcogenides have demonstrated convincingly the co-existence of multiple angular momentum degrees of freedom -- of spin (1/2 $s_z=\pm 1/2$), valley ($\tau =K,K^{\prime }$ or $\pm 1$), and atomic orbital ($l_z=\pm 2$) origins -- in the valence band with strong interlocking among them, which results in noise-resilient pseudospin states ideal for spintronic type applications. With field modulation a powerful, universal means in physics studies and applications, this work develops, from bare models in the context of complicated band structure, a general effective theory of field-modulated spin-valley-orbital pseudospin physics that is able to describe both intra- and inter- valley dynamics. Based on the theory, it predicts and discusses the linear response of a pseudospin to external fields of arbitrary orientations. Paradigm field configurations are identified for pseudospin control including pseudospin flipping. For a nontrivial example, it presents a spin-valley-orbital quantum computing proposal, where the theory is applied to address all-electrical, simultaneous control of $s_z$, $\tau$, and $l_z$ for qubit manipulation. It demonstrates the viability of such control with static field effects and an additional dynamic electric field. An optimized qubit manipulation time ~ O(ns) is given.

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Cited by in corpus (2)

• Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe${}_2$
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot