Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
arXiv:2311.00250 · doi:10.1063/5.0165593
Abstract
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer graphene using natural p-n junctions as tunnel barriers. In these devices, demonstrating the electrical tunability of the p-n junction barriers and understanding its physical mechanism, especially in the few-electron regime, are essential for further manipulating electron's quantum degrees of freedom to encode qubits. Here, we show the electrostatic confinement of single quantum dots in bilayer graphene using natural p-n junctions. When the device is operated in the few-electron regime, the electron tunneling rate is found to be monotonically tuned by varying gate voltages, which can be well understood from the view of manipulating the p-n junction barriers. Our results provide an insightful understanding of electrostatic confinement using natural p-n junctions in bilayer graphene, which is beneficial for realizing graphene-based qubits.
References in corpus (41)
- Spins in few-electron quantum dots
- Chaotic Dirac billiard in graphene quantum dots
- Electron transport through double quantum dots
- Gate-induced insulating state in bilayer graphene devices
- Silicon Quantum Electronics
- Spin qubits in graphene quantum dots
- Universal control of a six-qubit quantum processor in silicon
- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
- Tunable Graphene Single Electron Transistor
- Disorder-induced gap behavior in graphene nanoribbons
- Electron-Hole Crossover in Graphene Quantum Dots
- Universal logic with encoded spin qubits in silicon
- Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
- Nagaoka ferromagnetism observed in a quantum dot plaquette
- A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor
- Coherent spin state transfer via Heisenberg exchange
- Coupled quantum dots in bilayer graphene
- Excited states in bilayer graphene quantum dots
- A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
- Gate-defined electron-hole double dots in bilayer graphene
- Gate-Tunable Quantum Dot in a High Quality Single Layer MoS Van der Waals Heterostructure
- Electron-hole crossover in gate-controlled bilayer graphene quantum dots
- Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
- Single-electron double quantum dots in bilayer graphene
- Spin-valley coupling in single-electron bilayer graphene quantum dots
- Charge detection in gate-defined bilayer graphene quantum dots
- Tunable valley splitting and bipolar operation in graphene quantum dots
- Spin relaxation in a single-electron graphene quantum dot
- Electrotunable artificial molecules based on van der Waals heterostructures
- Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
- Single-shot readout in graphene quantum dots
- Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
- Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- Shell Filling and Trigonal Warping in Graphene Quantum Dots
- Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe
- Probing two-electron multiplets in bilayer graphene quantum dots
- A Movable Valley Switch Driven by Berry Phase in Bilayer Graphene Resonators
- Gate controlled quantum dots in monolayer WSe2
- Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot
- Dispersive sensing of charge states in a bilayer graphene quantum dot
- Tunable interdot coupling in few-electron bilayer graphene double quantum dots
Cited by in corpus (4)
- Extended Hubbard model describing small multi-dot arrays in bilayer graphene
- Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
- Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene
- Electrically-tunable graphene nanomechanical resonators