42 citations · 64 across the 4 of their papers we have counts for
6 papers
Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene
Fang-Ming Jing, Zhen-Xiong Shen, Guo-Quan Qin +8
The weak spin-orbit coupling (SOC) in bilayer graphene (BLG) is essential for encoding spin qubits while bringing technical challenges for extracting the opened small SOC gap Δ_SO…
Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
Guo-Quan Qin, Fang-Ming Jing, Tian-Yue Hao +5
We demonstrate a switchable electron shell structure in a bilayer graphene quantum dot by manipulating the trigonal warping effect upon electrical gating. Under a small perpendicul…
Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
Fang-Ming Jing, Guo-Quan Qin, Zhuo-Zhi Zhang +2
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature,…
Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
Fang-Ming Jing, Zhuo-Zhi Zhang, Guo-Quan Qin +5
Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fun…
Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
Xin Zhang, Rui-Zi Hu, Hai-Ou Li +11
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to s…
Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Ke Wang, Hai-Ou Li, Gang Luo +10
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…