Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
arXiv:1912.08365 · doi:10.1103/PhysRevLett.124.257701
Abstract
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 1.6 eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 0.7 eV.
arXiv comment13 pages and 4 figures for Manuscript, 17 pages and 7 figures for Supplementary material
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