Fast spin-valley-based quantum gates in Si with micromagnets
arXiv:2010.14844
Abstract
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a synthetic spin-orbit coupling (SOC), which allows high-fidelity spin manipulation and strong interaction between an electron spin and cavity photons. To scaled-up quantum computing, multiple technical challenges remain to be overcome, including controlling the valley degree of freedom, which is usually considered detrimental to a spin qubit. Here, we show that it is possible to significantly enhance the electrical manipulation of a spin qubit through the effect of constructive interference and the large spin-valley mixing. To characterize the quality of spin control, we also studied spin dephasing due to charge noise through spin-valley mixing. The competition between the increased control strength and spin dephasing produces two sweet-spots, where the quality factor of the spin qubit can be high. Finally, we reveal that the synthetic SOC leads to distinctive spin relaxation in silicon, which explains recent experiments.
Accepted by NPJ Quantum Inf
References in corpus (10)
- Coherent control of a single electron spin with electric fields
- An addressable quantum dot qubit with fault-tolerant control fidelity
- Simple pulses for elimination of leakage in weakly nonlinear qubits
- Electrically driven single electron spin resonance in a slanting Zeeman field
- Strong coupling of a spin qubit to a superconducting stripline cavity
- Experimental signature of phonon-mediated spin relaxation
- Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
- Spin relaxation in a Si quantum dot due to spin-valley mixing
- An electrically driven spin qubit based on valley mixing
- Engineered valley-orbit splittings in quantum confined nanostructures in silicon