Dispersive sensing of charge states in a bilayer graphene quantum dot
arXiv:2012.06221 · doi:10.1063/5.0040234
Abstract
We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280 MHz is directly coupled to an ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate-voltage range and allows to probe excited states down to the single-electron regime. Crucially, the presented sensing technique avoids the use of an additional, capacitively coupled quantum device such as a quantum point contact or single electron transistor, making dispersive sensing particularly interesting for gate-defined graphene quantum dots.
5 Pages, 4 Figures
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Cited by in corpus (13)
- Nanomaterials for Quantum Information Science and Engineering
- Spin relaxation in a single-electron graphene quantum dot
- Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
- Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot
- Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
- Extended Hubbard model describing small multi-dot arrays in bilayer graphene
- Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
- Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
- Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
- Tuning confined states and valley g-factors by quantum dot design in bilayer graphene
- RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
- Radio-frequency charge detection on graphene electron-hole double quantum dots