Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry

Abstract

Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demonstrate proportional-integral-differential feedback control of the radio-frequency reflectometry in GaN nanodevices using a field-programmable gate array. This technique can maintain the operating point of the charge sensor with high sensitivity. The system also realizes a wide dynamic range and high sensor sensitivity through the monitoring of the feedback signal. This method has potential applications in exploring dynamics and instability of electronic and quantum states in nanostructures.

arXiv comment13 pages, 5 figures

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Cited by in corpus (4)

• RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
• Charge state estimation in quantum dots using a Bayesian approach
• Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
• Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics