13 citations · 23 across the 6 of their papers we have counts for
6 papers
Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry
Kosuke Noro, Motoya Shinozaki, Yusuke Kozuka +6
Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the…
Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
Takaya Abe, Motoya Shinozaki, Kazuma Matsumura +6
GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FE…
Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
Motoya Shinozaki, Takaya Abe, Kazuma Matsumura +3
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum…
Kondo effect in electrostatically defined ZnO quantum dots
Kosuke Noro, Yusuke Kozuka, Kazuma Matsumura +5
Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si…
Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
Yoshihiro Fujiwara, Motoya Shinozaki, Kazuma Matsumura +5
Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic state…
Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
Kazuma Matsumura, Takaya Abe, Takahito Kitada +5
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length de…